PART |
Description |
Maker |
UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM 256K x 4 Static RAM x4快速页面模式的DRAM 512K x 32 Static RAM x4快速页面模式的DRAM 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM 512K x 24 Static RAM x4快速页面模式的DRAM 2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM 128K x 8 Static RAM 128K的8静态RAM x4FastPageModeDRAM
|
Elpida Memory, Inc. EPCOS AG STMicroelectronics N.V. NEC, Corp.
|
UPD4265800LE-A80 UPD4264800LE-A80 UPD4265800LE-A70 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 64K x 16 Static RAM 1K x 8 Dual-Port Static RAM 1-Mbit (64K x 16) Static RAM x8快速页面模式的DRAM
|
STMicroelectronics N.V.
|
CAT59C11P CAT59C11PI CAT59C11K-TE13 CAT59C11K-TE7 |
256K x 4 Static RAM 2M x 8 Static RAM Microwire Serial EEPROM 16-Mbit (2M x 8) Static RAM 微型导线串行EEPROM 512K x 32 Static RAM
|
Atmel, Corp.
|
CY7C1041CV33-12ZSXE CY7C1041CV33-12ZSXET |
4-Mbit (256 K 16) Static RAM
|
Cypress
|
CY62146ELL-45ZSXA |
4-Mbit (256 K x 16) Static RAM
|
Cypress Semiconductor
|
BB4EG BB4GK BB4KLX BB4JKX BB4DF BB4NPX |
MoBL® 8-Mbit (512K x 16) Static RAM MoBL® 32-Mbit (2M x 16) Static RAM MoBL® 16-Mbit (1M x 16) Static RAM "SHIELDING BAG 16 X 18"" Inhalt pro Packung: 10 Stk. “屏蔽袋16 X 18”,“Inhalt亲Packung0沙头角。
|
ON Semiconductor
|
CY7C197BN-25PC CY7C197BN-15VC |
256-Kb (256 K x 1) Static RAM Fast access time: 15 ns 256 Kb (256K x 1) Static RAM 256K X 1 STANDARD SRAM, 15 ns, PDSO24 256 Kb (256K x 1) Static RAM 256K X 1 STANDARD SRAM, 25 ns, PDIP24
|
Cypress Semiconductor, Corp.
|
CY62138EV30 CY62138EV30LL |
2-Mbit (256 K x 8) MoBL Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
P4C422-25DC P4C422-25DMB P4C422-12FC P4C422-15FC P |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 12 ns, CDFP24 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 15 ns, CDFP24 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, PDSO24 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, PDIP22 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, CDIP22 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, PDSO24 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDFP24 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDIP22 HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor Corporation Pyramid Semiconductor, Corp.
|
CYK001M16ZCCAU-70BAI CYK001M16ZCCA CYK001M16ZCCAU- |
1M X 16 PSEUDO STATIC RAM, 55 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48 16-Mbit (1M x 16) Pseudo Static RAM CAP 1000PF 1000V 5% NP0(C0G) SMD-1812 TR-7 PLATED-NI/SN 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位)的CMOS电压1.8只。同时采取行动,页面模式闪存兆位12x 8-Bit/256x 16位),静态存储器(初步) Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|